KANSCHAT PETER (Total 99 Patents Found)

A power semiconductor module includes a housing element into which one or more connecting lugs are inserted. Each connecting lug has a foot region on the topside of which one or more bonding connections can be produced. In order to fix the foot regions, press-on elements are provided, which press against the end of the...
The invention relates to an arrangement comprising a shunt resistor with at least an electrically conductive first connecting leg and an electrically conductive second connecting leg. A resistance area of the shunt resistor is electrically connected to the first connecting leg and to the second connecting leg. The arra...
Leistungshalbleitermodulsystem mit einem Leistungshalbleitermodul (1) und einem Kühlkörper (2), sowie mit wenigstens einem Befestigungsmittel (7), mittels dem das Leistungshalbleitermodul (1) fest mit dem Kühlkörper (2) verbunden werden kann, wobei das Leistungshalbleitermodul (1) eine Unterseite (12) mit einer er...
In order to limit an overvoltage at a parallel circuit of IGBT ( 3 ) and freewheeling diode ( 7 ), an undesirable current spike is used to switch on the intrinsically turned-off IGBT ( 3 ′) during the presence of the current spike precisely to an extent such that a current which counteracts the overvoltage arises in ...
Schaltungsanordnung mit einem ersten Halbleiterschaltelement (1), das eine Laststrecke und einen Ansteueranschluss aufweist und das als Leistungs-MOSFET oder Leistungs-IGBT ausgebildet ist, mit einer Spannungsversorgungsschaltung (2), die aufweist: eine Induktivität (21), die in Reihe zu der Laststrecke des ersten ...
A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is c...
The invention relates to a power semiconductor module including a module housing and at least one substrate populated with at least one power semiconductor chip. The module housing has a bottom side and a top side spaced away from the bottom side in a positive vertical direction. In addition, the substrate has a bottom...
The invention relates to a twist-secured assembly of a power semiconductor module mountable on a heat sink, including a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with...
Method for producing chip assemblies that include semiconductor chip arrangements, each semiconductor chip arrangement including a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electri...
A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conj...
A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an...
A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is c...
The present invention relates to a power semiconductor component, a power semiconductor assembly including the same, and a method for operating the power semiconductor assembly. A power semiconductor component including a semiconductor body (1) and two load terminals (21, 22) is provided. Provided furthermore is a pote...
A semiconductor arrangement includes a plurality of chip assemblies, each of which includes a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lam...
Beschrieben wird eine mit einem ersten Halbleiterschaltelement (1), das eine Laststrecke und einen Ansteueranschluss aufweist, und mit einer Spannungsversorgungsschaltung (2), die aufweist: eine Induktivität (21), die in Reihe zu der Laststrecke des ersten Halbleiterschaltelements (21) geschaltet ist; eine kapazitive ...
A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an...
Die Erfindung betrifft ein leistungshalbleitermodul mit einer Modulunterseite (102), einem Gehäuse (104) sowie wenigstens zwei voneinander beabstandeten Schaltungsträgern (T1, T2). Jeder der Schaltungsträger (T1, T2) weist eine dem Inneren des Gehäuses (104) zugewandte Oberseite (51) auf sowie eine dem Inneren des ...
A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is c...
The invention relates to a power semiconductor module and a method for producing the same. The power semiconductor module includes a housing element (40) into which one or more connecting lugs (3) are inserted. Each connecting lug (3) has a foot region (31) on the topside (31t) of which one or more bonding connections ...
Die elektrische Anordnung umfasst ein Substrat (9) mit mindestens einem elektrischen Bauteil (40) und/oder einer Leiterbahn (11), auf dem mindestens eine Metallisierung (10) aufgebracht ist. Um bei einer solchen Anordnung eine elektrisch leitende Schicht oder einen leitenden Verbindungsbereich mit hervorragenden elektr...
A semiconductor arrangement includes top and bottom contact plates, a plurality of chip assemblies, a dielectric embedding compound, and a control electrode interconnection structure. Each chip assembly has a semiconductor chip having a semiconductor body. The semiconductor body has a top side and an opposing underside...
Eine Anordnung umfassend ein Halbleiterbauelement (2) und ein Drahtbauteil, das zur Kontaktierung des Halbleiterbauelements (2) elastisch vorgespannt mit einer Stirnseite an einer Oberflächenschicht (3) des Halbleiterbauelementes (2) anliegt, wobei die Oberflächenschicht (3) aus Kupfer besteht und eine Dicke von grö...
A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a seco...
A power semiconductor module 3 for mounting on a cooling element 4 has at least one substrate 2, on which one or more components 5, 6, 7 are mounted and a module housing 40. The module housing 40 surrounds at least partially the at least one substrate 2. The module housing 40 has opposite sides with a f...
The invention relates to an arrangement comprising a shunt resistor with at least an electrically conductive first connecting leg and an electrically conductive second connecting leg. A resistance area of the shunt resistor is electrically connected to the first connecting leg and to the second connecting leg. The arra...
A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the semiconductor body. A control structure electrically connects a recombination region to the drift zone during a desaturation cycle and disconnects the recombination regio...
A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a seco...
A semiconductor arrangement includes a plurality of chip assemblies, each of which includes a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lam...
The invention relates to a twist-secured assembly of a power semiconductor module mountable on a heat sink, including a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with...
Ein Aspekt der Erfindung betrifft eine Halbleiteranordnung, Diese umfasst eine obere Kontaktplatte (41), eine untere Kontaktplatte (42), eine Anzahl von Chipbaugruppen (2), eine dielektrische Einbettmasse (4), sowie eine Steuerelektrodenverschaltungsstruktur (70). Eine jede der Chipbaugruppen (2) weist einen Halbleiter...
The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each subs...
A power semiconductor module system includes a power semiconductor module, a heat sink and at least one fastener. The power semiconductor module includes a bottom side with a first thermal contact surface and the heat sink includes a top side with a second thermal contact surface. The power semiconductor module is conj...
Leistungshalbleitermodul mit – einer Modulunterseite (102); – einem Gehäuse (104); – wenigstens zwei voneinander beabstandeten Schaltungsträgern (T1, T2, T3), von denen jeder eine dem Inneren des Gehäuses (104) zugewandte Oberseite (51) aufweist, sowie eine dem Inneren des Gehäuses (104) abgewandte Unterse...
A semiconductor arrangement includes top and bottom contact plates, a plurality of chip assemblies, a dielectric embedding compound, and a control electrode interconnection structure. Each chip assembly has a semiconductor chip having a semiconductor body. The semiconductor body has a top side and an opposing underside...
Verfahren zur Herstellung eines Halbleitermoduls, welches ein mit einer Metallisierung versehenes Substrat (5) und mindestens ein als flaches Plättchen ausgebildetes Halbleiterbauelement (1) aufweist, welches an seiner Unterseite eine untere elektrische Anschlussfläche und an seiner Oberseite eine obere elektrische A...
Ein Aspekt der Erfindung der betrifft eine Halbleiteranordnung. Diese umfasst eine obere Kontaktplatte (41), eine untere Kontaktplatte (42), sowie eine Anzahl von Chipbaugruppen (2). Eine jede der Chipbaugruppen (2) weist einen einen Halbleiterchip (1) mit einem Halbleiterkörper (10) auf, der eine Oberseite und eine d...
The invention relates to a power semiconductor module including a module underside, a module housing, and at least two substrates spaced from each other. Each substrate has a topside facing an interior of the module housing and an underside facing away from the interior of the module housing. The underside of each subs...
A semiconductor arrangement includes upper and lower contact plates and basic chip assemblies. Each chip assembly has a semiconductor chip having a semiconductor body with upper and lower spaced apart sides. An individual upper main electrode and an individual control electrode are arranged on the upper side. The chip ...
A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is c...
本发明涉及功率半导体部件、包括其的功率半导体组件及其操作方法。提供一种功率半导体部件,该功率半导体部件包含半导体主体(1)和两个负载端子(21、22)。此外还提供有电位探针(3),其设计成对于施加于两个负载端子(21、22)两端的电压(V1-V...
L'objectif de l'invention est de limiter une surtension au niveau d'un circuit dans lequel sont montés en parallèle un transistor bipolaire à grille isolée (IGBT) (3) et une iode de roue libre (7). A cet effet, on utilise, selon l'invention, un pic de courant indésirable pour mettre en circuit l...